IRL6283MPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Environmentally Friendly Product

StrongIRFET™
IRL6283MTRPbF
Applications
•ORing, eFuse, and high current
load switch
•Load switch for battery
application
•Inverter switches for DC motor
application
V_DSS
V_GS
20V max ±12V max
DirectFET^® N-Channel Power MOSFET 
V_gs(th)
0.8V
Typical values (unless otherwise specified)
R_DS(on)
R_DS(on)
R_DS(on)
0.50mΩ@10V 0.65mΩ@4.5V 1.1mΩ@2.5V
S
S
Features and Benefits
•Environmentally Friendly Product
•RoHs compliant containing no Lead, no Bromide
and no Halogen
•Very Low R_DS(on)
S
D
D
G
S
MD
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) 
SQ
SX
ST
MQ
MD
MT
MP
MC
Description
The IRL6283MTRPbF combines the latest HEXFET^® N-Channel Power MOSFET Silicon technology with the advanced DirectFET^®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The Direct-
FET^® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Base part number
IRL6283MTRPbF
Package Type
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRL6283MTRPbF
Absolute Maximum Ratings
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
E_AS
I_AR
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V 
Continuous Drain Current, V_GS @ 4.5V 
Continuous Drain Current, V_GS @ 4.5V 
Pulsed Drain Current 
Single Pulse Avalanche Energy 
Avalanche Current 
Max.
±12
38
30
211
305
406
30
Units
V
A
mJ
A
2.0
1.8
ID = 38A
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 25°C
TJ = 125°C
0.4
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
 Surface mounted on 1 in. square Cu board, steady state.
14.0
12.0 ^{ID= 30A}
10.0
VDS= 16V
VDS= 10V
8.0
VDS= 4.0V
6.0
4.0
2.0
0.0
0
50 100 150 200 250 300
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 TC measured with thermocouple mounted to top (Drain) of part.
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting T_J = 25°C, L = 0.88mH, R_G = 50Ω, I_AS = 30A.
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September 24, 2014