IRL620S Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

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HEXFET^® Power MOSFET
PD -9.1218
IRL620S
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
R_DS(on) Specified at V_GS=4V & 5V
Fast Switching
V_DSS = 200V
R_DS(on) = 0.80Ω
I_D = 5.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
SMD-220
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ 5.0 V
Continuous Drain Current, V_GS @ 5.0 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Max.
5.2
3.3
21
50
3.1
0.40
0.025
±10
125
5.2
5.0
5.0
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
—
—
—
Typ.
—
—
—
Max.
2.5
40
62
Units
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
To Order
Revision 0