IRL5NJ024 Datasheet, PDF (1/7 Pages) International Rectifier – LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)

PD - 93955A
LOGIC LEVEL
HEXFET^® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number
BVDSS
IRL5NJ024
55V
RDS(on)
0.06Ω
ID
17A
IRL5NJ024
55V, N-CHANNEL
Fifth Generation HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-0.5
Features:
n Logic Level Gate Drive
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
17
11
68
35
0.28
±16
56
11
3.5
4.3
-55 to 150
300 (for 5 s)
2.6
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
1
7/13/01