IRL3803VS Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3803VS)
l Low-profile through-hole (IRL3803VL)
l 175°C Operating Temperature
G
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET^® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
PD - 94735
IRL3803VS
IRL3803VL
HEXFET^® Power MOSFET
D
V_DSS = 30V
R_DS(on) = 5.5mΩ
I_D = 140A‡
S
The D²Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D²Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount
application.
D²Pak
IRL3803VS
TO-262
IRL3803VL
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V ˆ
Continuous Drain Current, V_GS @ 10V ˆ
Pulsed Drain Current ˆ
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒˆ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, steady state)‰
Max.
140‡
110
470
3.8
200
1.4
± 16
71
20
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.74
40
Units
A
W
W
W/°C
V
A
mJ
V/ns
Units
°C/W
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1
07/21/03