IRL3715ZCSPBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
Benefits
l Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 95220
IRL3715ZCSPbF
IRL3715ZCLPbF
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg
20V
11mΩ 7.0nC
D²Pak
IRL3715ZCS
TO-262
IRL3715ZCL
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient (PCB Mount) „
Max.
20
± 20
50 …
36 …
200
45
23
0.30
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
Max.
3.33
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 11
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1
04/27/04