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| IRL3303LPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3303S)
l Low-profile through-hole (IRL3303L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3303L) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10VÂ
Continuous Drain Current, VGS @ 10VÂ
Pulsed Drain Current ÂÂ
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt ÂÂ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 95578
IRL3303LPbF
IRL3303SPbF
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 0.026â¦
ID = 38A
S
D 2 Pak
TO-262
Max.
38
27
140
3.8
68
0.45
±16
130
20
6.8
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
ÂÂÂ
ÂÂÂ
Max.
2.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
07/20/04
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