IRL3103D1S Datasheet, PDF (1/7 Pages) International Rectifier – FETKY™ MOSFET & SCHOTTKY RECTIFIER(Vdss=30V, Rds(on)=0.014ohm, Id=64A)

PD- 9.1558A
IRL3103D1S
FETKY^TM MOSFET & SCHOTTKY RECTIFIER
l Co-packaged HEXFET^® Power MOSFET
D
and Schottky Diode
l Generation 5 Technology
V_DSS = 30V
l Logic Level Gate Drive
l Minimize Circuit Inductance
R_DS(on) = 0.014Ω
l Ideal For Synchronous Regulator Application ^G
I_D = 64A
S
Description
The FETKY family of co-packaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5 MOSFET
with a low forward voltage drop Schottky diode and
minimized component interconnect inductance and
resistance result in maximized converter efficiencies.
The D²Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D²Pak is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10Vƒ
Continuous Drain Current, V_GS @ 10Vƒ
Pulsed Drain Current ƒ
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
D ² Pak
Max.
64
45
220
3.1
89
0.56
± 16
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
T O -26 2
Units
A
W
W
W/°C
V
°C
Units
°C/W
4/2/98