IRL3102S Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A)

PRELIMINARY
l Advanced Process Technology
l Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
G
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters. Advanced processing techniques
combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency
at minimum cost.
The D²Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D²Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 4.5V…
Continuous Drain Current, V_GS @ 4.5V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_qJC
R_qJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD 9.1691A
IRL3102S
HEXFET^® Power MOSFET
D
V_DSS = 20V
R_DS(on) = 0.013W
I_D = 61A
S
D ²Pak
Max.
61
39
240
89
0.71
± 10
220
35
8.9
5.0
-55 to + 150
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
9/16/97