IRL2703S Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 9.1360
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
IRL2703S
HEXFET^® Power MOSFET
D
V_DSS = 30V
R_DS(on) = 0.04Ω
S
I_D = 24A
The D²PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D²PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
D ²Pak
Absolute Maximum Ratings
I_D @ T_C = 25°C
ID @ TC = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
TJ
T _STG
Parameter
Continuous Drain Current, V_GS @ 10V…
Continuous Drain Current, V_GS @ 10V…
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
R_θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount,steady-state)**
Max.
24
17
96
45
0.30
±16
77
14
4.5
3.5
-55 to + 175
300 (1.6mm from case)
Min.
––––
––––
Typ.
––––
––––
Max.
3.3
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/96