IRL2203S Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A⑤)

PRELIMINARY
PD 9.1091A
IRL2203S
HEXFET^® Power MOSFET
l Logic-Level Gate Drive
l Surface Mount
l Advanced Process Technology
l Dynamic dv/dt Rating
G
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D²Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D²Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V†
Continuous Drain Current, V_GS @ 10V†
Pulsed Drain Current †
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dtĠ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
D
V_DSS = 30V
R_DS(on) = 0.007Ω
I_D = 100A…
S
D²Pak
Max.
100…
71
400
3.8
130
0.83
± 20
390
60
13
1.2
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.2
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W