IRL1404ZPBF Datasheet, PDF (1/13 Pages) International Rectifier – AUTOMOTIVE MOSFET HEXFET® Power MOSFET

PD - 97211
AUTOMOTIVE MOSFET
IRL1404ZPbF
IRL1404ZSPbF
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
Specifically designed for Automotive applications,
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
IRL1404ZLPbF
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 3.1mΩ
G
I_D = 75A
S
DS
G
TO-220AB
IRL1404ZPbF
S
GD
D²Pak
IRL1404ZSPbF
DS
G
TO-262
IRL1404ZLPbF
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C _{Continuous Drain Current, VGS @ 10V}
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C _{Power Dissipation}
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h E_AS (Tested )
Ù ^IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E_AR
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
Junction-to-Case
i Case-to-Sink, Flat, Greased Surface
i Junction-to-Ambient
jà Junction-to-Ambient (PCB Mount)
www.irf.com
Max.
180
130
75
790
200
1.3
± 16
190
490
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
k 0.75
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
05/17/06