IRL1404PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET® Power MOSFET ( VDSS = 40V , RDS(on) = 4.0mΩ , ID = 160A )

PD - 95588
IRL1404PbF
HEXFET^® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
D
V_DSS = 40V
R_DS(on) = 4.0mΩ
G
I_D = 160A†
S
Description
Seventh Generation HEXFET^® power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The
low thermal resistance and low package cost of the TO-220 contribute to
its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted)‡
Max.
160†
110†
640
200
1.3
± 20
620
95
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
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1
07/20/04