IRL1004PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Process Technology

l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing techniques
to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
R_θJC
R_θCS
R_qJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
PD - 95403
IRL1004PbF
HEXFET^® Power MOSFET
D
V_DSS = 40V
R_DS(on) = 0.0065Ω
I_D = 130A…
S
TO-220AB
Max.
130…
92…
520
200
1.3
± 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
1
6/17/04