IRHYS597Z30CM_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-96899A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
IRHYS597Z30CM
JANSR2N7519T3
30V, P-CHANNEL
REF: MIL-PRF-19500/732
5 TECHNOLOGY
™
Part Number
Radiation Level
IRHYS597Z30CM 100K Rads (Si)
IRHYS593Z30CM 300K Rads (Si)
RDS(on)
0.072Ω
0.072Ω
ID QPL Part Number
-20A* JANSR2N7519T3
-20A* JANSF2N7519T3
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
Low-Ohmic
TO-257AA
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC=100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-20*
-18
-80
75
0.6
±20
200
-20
7.5
-1.84
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in./1.6mm from case for 10s)
4.3 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
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1
02/23/15