IRHYS597Z30CM Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

PD-96899
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYS597Z30CM
30V, P-CHANNEL
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
IRHYS597Z30CM 100K Rads (Si) 0.072Ω
IRHYS593Z30CM 300K Rads (Si) 0.072Ω
ID
-20A*
-20A*
Low-Ohmic
TO-257AA
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-20*
-18
A
-80
75
W
0.6
W/°C
±20
V
200
mJ
-20
A
7.5
mJ
-1.84
-55 to 150
V/ns
o_C
300 (0.063in./1.6mm from case for 10s)
4.3 ( Typical )
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
12/21/04