IRHYS597034CM_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-96911A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
IRHYS597034CM
JANSR2N7520T3
60V, P-CHANNEL
REF: MIL-PRF-19500/732
5_{ TECHNOLOGY}
™
Part Number
Radiation Level RDS(on)
IRHNJ597034CM 100K Rads (Si) 0.08Ω
IRHNJ593034CM 300K Rads (Si) 0.08Ω
ID QPL Part Number
-20A JANSR2N7520T3
-20A JANSF2N7520T3
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Low-Ohmic
Features:
TO-257AA
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-20
-13
A
-80
75
W
0.6
W/°C
±20
V
134
mJ
-20
A
7.5
mJ
-4.9
V/ns
-55 to 150
°C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
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02/11/15