IRHY9130CM Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

PD - 91400C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY9130CM
JANSR2N7382
100V, P-CHANNEL
REF: MIL-PRF-19500/615
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY9130CM 100K Rads (Si)
IRHY93130CM 300K Rads (Si)
RDS(on)
0.30Ω
0.30Ω
ID
-11A
-11A
QPL Part Number
JANSR2N7382
JANSF2N7382
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-11
-7.0
A
-44
75
W
0.6
W/°C
±20
V
150
mJ
-11
A
7.5
mJ
-16
-55 to 150
V/ns
o_C
300 (0.063 in (1.6mm)from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
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1
06/13/02