IRHY7130CM_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 91274E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY7130CM
JANSR2N7380
100V, N-CHANNEL
REF: MIL-PRF-19500/614
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY7130CM 100K Rads (Si)
IRHY3130CM 300K Rads (Si)
IRHY4130CM 500K Rads (Si)
IRHY8130CM 1000K Rads (Si)
RDS(on)
0.18Ω
0.18Ω
0.18Ω
0.18Ω
ID
14.4A
14.4A
14.4A
14.4A
QPL Part Number
JANSR2N7380
JANSF2N7380
JANSG2N7380
JANSH2N7380
International Rectifier’s RAD-Hard^TM HEXFET^® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rds(on) and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
14.4
9.1
58
75
0.6
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
±20
150
14.4
7.5
6.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
o_C
300 (0.063 in.(1.6mm) from case for 10s)
Weight
7.0 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
05/02/06