IRHY597230CM_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 94319B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHY597230CM 100K Rads (Si) 0.515Ω -8.0A
IRHY593230CM 300K Rads (Si) 0.515Ω -8.0A
IRHY597230CM
200V, P-CHANNEL
4# TECHNOLOGY
c
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
T0-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-8.0
-5.0
A
-32
75
W
0.6
W/°C
±20
V
80
mJ
-8.0
A
7.5
mJ
-12
V/ns
-55 to 150
o_C
300 (0.063in/1.6mm from case for 10s )
4.3 ( Typical )
g
For footnotes refer to the last page
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1
01/30/03