IRHY57Z30CM Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

PD-93824E
IRHY57Z30CM
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57Z30CM 100K Rads (Si) 0.03Ω
IRHY53Z30CM 300K Rads (Si) 0.03Ω
IRHY54Z30CM 500K Rads (Si) 0.03Ω
IRHF58Z30CM 1000K Rads (Si) 0.035Ω
JANSR2N7482T3
30V, N-CHANNEL
REF: MIL-PRF-19500/702
5 TECHNOLOGY
™
ID QPL Part Number
18A* JANSR2N7482T3
18A* JANSF2N7482T3
18A* JANSG2N7482T3
18A* JANSH2N7482T3
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
18*
A
72
75
W
0.6
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
V
Single Pulse Avalanche Energy Á
177
mJ
Avalanche Current À
18
A
Repetitive Avalanche Energy À
7.5
mJ
Peak Diode Recovery dv/dt Â
1.7
V/ns
Operating Junction
Storage Temperature Range
-55 to 150
o_C
Lead Temperature
300 (0.063in./1.6mm from case for 10 sec)
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/25/06