IRHY57230CMSE Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

PD - 93822B
IRHY57230CMSE
RADIATION HARDENED
JANSR2N7489T3
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (TO-257AA)
REF:MIL-PRF-19500/705
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHY57230CMSE 100K Rads (Si) 0.23Ω 12A JANSR2N7489T3
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
12
7.6
A
48
75
W
0.6
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
60
Avalanche Current À
12
Repetitive Avalanche Energy À
7.5
Peak Diode Recovery dv/dt Â
5.4
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063in./1.6mm from case for 10sec)
Weight
4.3 (Typical)
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
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1
06/10/04