IRHY57230CM Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

PD - 93827A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level
IRHY57230CM 100K Rads (Si)
IRHY53230CM 300K Rads (Si)
IRHY54230CM 600K Rads (Si)
IRHY58230CM 1000K Rads (Si)
RDS(on)
0.21Ω
0.21Ω
0.21Ω
0.26Ω
ID
12.5A
12.5A
12.5A
12.5A
IRHY57230CM
200V, N-CHANNEL
4# TECHNOLOGY
c
TO-257AA
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
12.5
8.0
A
50
75
W
0.6
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
±20
60
12.5
7.5
4.4
-55 to 150
V
mJ
A
mJ
V/ns
o_C
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 ( Typical )
g
For footnotes refer to the last page
www.irf.com
1
1/30/2001