IRHY57034CM_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-93825E
IRHY57034CM
RADIATION HARDENED
JANSR2N7483T3
POWER MOSFET
60V, N-CHANNEL
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57034CM 100K Rads (Si) 0.04Ω
IRHY53034CM 300K Rads (Si) 0.04Ω
IRHY54034CM 500K Rads (Si) 0.04Ω
IRHY58034CM 1000K Rads (Si) 0.048Ω
REF: MIL-PRF-19500/702
5 TECHNOLOGY
™
ID QPL Part Number
18A* JANSR2N7483T3
18A* JANSF2N7483T3
18A* JANSG2N7483T3
18A* JANSH2N7483T3
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
18*
A
72
75
W
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy Á
110
mJ
IAR
Avalanche Current À
18
A
EAR
Repetitive Avalanche Energy À
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt Â
10
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
°C
300 (0.063in./1.6mm from case for 10sec)
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/19/11