IRHSNA57Z60_15 Datasheet, PDF (1/9 Pages) International Rectifier – Simple Drive Requirements

PD-94237F
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSNA57Z60
30V, N-CHANNEL
Product Summary
Part Number Radiation Level RDS(on) QG
IRHSNA57Z60 100K Rads (Si) 3.5mΩ 200nC
IRHSNA53Z60 300K Rads (Si) 3.5mΩ 200nC
IRHSNA54Z60 600K Rads (Si) 3.5mΩ 200nC
IRHSNA58Z60 1000K Rads (Si) 4.0mΩ 200nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
n Low Conduction Losses
n Low Switching Losses
n Low Vf Schottky Rectifier
n Refer to IRHSLNA57Z60 for Lower Inductance
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➃
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Schottky and Body Diode Avg. Forward Current ➂
Schottky and Body Diode Avg. Forward Current ➂
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
75*
75*
A
300
250
W
2.0
W/°C
±20
V
500
mJ
75
A
25
mJ
75*
75*
A
-55 to 150
°C
300 (for 5s)
3.3 (Typical)
g
1
09/06/02