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IRHSNA57064_15 Datasheet, PDF (1/9 Pages) International Rectifier – Simple Drive Requirements | |||
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PD-94323D
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSNA57064
60V, N-CHANNEL
Product Summary
Part Number Radiation Level RDS(on) QG
IRHSNA57064 100K Rads (Si) 6.5m⦠160nC
IRHSNA53064 300K Rads (Si) 6.5m⦠160nC
IRHSNA54064 600K Rads (Si) 6.5m⦠160nC
IRHSNA58064 1000K Rads (Si) 6.5m⦠160nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifierâs low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC
Converters up to 56A Output
n Low Conduction Losses
n Low Switching Losses
n Low Vf Schottky Rectifier
n Refer to IRHSLNA57064 for Lower Inductance
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain or Source Current
ID @ VGS = 12V, TC = 100°C Continuous Drain or Source Current
IDM
Pulsed Drain Current Ã
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Ã
Avalanche Current Ã
Repetitive Avalanche Energy Ã
Schottky and Body Diode Avg. Forward Current Ã
Schottky and Body Diode Avg. Forward Current Ã
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
56*
56*
A
224
250
W
2.0
W/°C
±20
V
309
mJ
56
A
25
mJ
56*
56*
A
-55 to 125
°C
300 (for 5s)
3.3 (Typical)
g
1
12/18/07
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