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IRHSLNA57Z60_15 Datasheet, PDF (1/9 Pages) International Rectifier – Simple Drive Requirements | |||
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PD-94400B
RAD-HARD
SYNCHRONOUS RECTIFIER
SURFACE MOUNT (SMD-2)
IRHSLNA57Z60
30V, N-CHANNEL
Product Summary
Part Number Radiation Level RDS(on) QG
IRHSLNA57Z60 100K Rads (Si) 4.0m⦠200nC
IRHSLNA53Z60 300K Rads (Si) 4.0m⦠200nC
IRHSLNA54Z60 600K Rads (Si) 4.0m⦠200nC
IRHSLNA58Z60 1000K Rads (Si) 4.5m⦠200nC
SMD-2
Description:
The SynchFet family of Co-Pack RAD-Hard MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. RAD-Hard MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifierâs low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of Military and
Space applications.
Features:
n Co-Pack N-channel RAD-Hard MOSFET
and Schottky Diode
n Ideal for Synchronous Rectifiers in DC-DC
Converters up to 75A Output
n Low Conduction Losses
n Low Switching Losses
n Low Vf Schottky Rectifier
n Refer to IRHSNA57Z60 for Lower Rds(on)
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain or Source Current
Continuous Drain or Source Current
Pulsed Drain Current â
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
IF (AV)@ TC = 25°C
IF (AV)@ TC =100°C
TJ, TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy â
Avalanche Current â
Repetitive Avalanche Energy â
Schottky and Body Diode Avg. Forward Current â
Schottky and Body Diode Avg. Forward Current â
Opeating and Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
75*
75*
A
300
250
W
2.0
W/°C
±20
V
500
mJ
75
A
25
mJ
75*
75*
A
-55 to 150
°C
300 (for 5s)
3.3 (Typical)
g
1
03/30/04
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