IRHQ7110 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)

PD - 93785A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level
IRHQ7110 100K Rads (Si)
IRHQ3110 300K Rads (Si)
IRHQ4110 600K Rads (Si)
IRHQ8110 1000K Rads (Si)
RDS(on)
0.6Ω
0.6Ω
0.6Ω
0.75Ω
ID
3.0A
3.0A
3.0A
3.0A
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
IRHQ7110
100V, QUAD N-CHANNEL
RAD-Hard^™ HEXFET^®
MOSFET TECHNOLOGY
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
3.0
1.9
A
12
12
W
0.1
W/°C
±20
V
85
mJ
3.0
A
1.2
mJ
3.0
-55 to 150
V/ns
o_C
300 (for 5s)
0.89 (Typical)
g
For footnotes refer to the last page
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1
12/27/00