IRHQ6110_15 Datasheet, PDF (1/14 Pages) International Rectifier – Simple Drive Requirements

PD-91781C
IRHQ6110
RADIATION HARDENED ^{100V, Combination 2N-2P-CHANNEL}
POWER MOSFET
RAD-Hard^™ HEXFET^®
SURFACE MOUNT (LCC-28)
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHQ6110 100K Rads (Si) 0.6Ω
IRHQ63110 300K Rads (Si) 0.6Ω
IRHQ6110 100K Rads (Si) 1.1Ω
IRHQ63110 300K Rads (Si) 1.1Ω
ID
3.0A
3.0A
-2.3A
-2.3A
CHANNEL
N
N
P
P
LCC-28
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite
applications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
N-Channel
P-Channel Units
3.0
-2.3
1.9
-1.5
A
12
-9.2
12
12
W
0.1
0.1
W/°C
±20
±20
V
85 Á
75 ²
mJ
3.0
-2.3
A
1.2
1.2
mJ
3.0 Â
9.0 ³
V/ns
-55 to 150
°C
300 (for 5s)
0.89 (Typical)
g
For footnotes, refer to the last page
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1
07/20/11