IRHQ597110 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) 100V, Quad P-CHANNEL

PD-94210A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level RDS(on)
IRHQ597110 100K Rads (Si) 0.96Ω
IRHQ593110 300K Rads (Si) 0.98Ω
ID
-2.8A
-2.8A
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite
applications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHQ597110
100V, Quad P-CHANNEL
RAD-Hard^™ HEXFET^®
5 TECHNOLOGY
™
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
-2.8
-1.8
-11.2
12
0.1
±20
70
-2.8
1.2
-7.1
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
300 (for 5s)
0.89 (Typical)
g
1
05/18/05