IRHQ57214SE_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-93881D
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
IRHQ57214SE
250V, QUAD N-CHANNEL
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHQ57214SE 100K Rads (Si)
RDS(on)
1.5Ω
ID
1.9A
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects(SEE) with useful
performance up to an LET of 80 (MeV/(mg/cm²)). The
combination of low RDS(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control.
These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature
stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
1.9
1.2
7.6
12
0.1
±20
30
1.9
1.2
5.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.89 (Typical)
g
1
12/20/11