IRHQ57110_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-94211E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
Product Summary
Part Number Radiation Level RDS(on)
IRHQ57110 100K Rads (Si) 0.27Ω
IRHQ53110 300K Rads (Si) 0.27Ω
IRHQ54110 500K Rads (Si) 0.27Ω
IRHQ58110 1000K Rads (Si) 0.29Ω
ID
4.6A
4.6A
4.6A
4.6A
International Rectifier’s R5^TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm²)). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
Operating Junction
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
IRHQ57110
100V, Quad N-CHANNEL
5 TECHNOLOGY
™
LCC-28
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
4.6
2.9
18.4
12
0.1
±20
47
4.6
1.2
6.1
-55 to 150
300 (for 5s)
0.89 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
05/0115