IRHQ567110_15 Datasheet, PDF (1/14 Pages) International Rectifier – Simple Drive Requirements

PD-94057D
IRHQ567110
RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL
POWER MOSFET
RAD-Hard^™ HEXFET^®
SURFACE MOUNT (LCC-28)
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level RDS(on)
IRHQ567110 100K Rads (Si) 0.27Ω
IRHQ563110 300K Rads (Si) 0.29Ω
IRHQ567110 100K Rads (Si) 0.96Ω
IRHQ563110 300K Rads (Si) 0.98Ω
ID
4.6A
4.6A
-2.8A
-2.8A
CHANNEL
N
N
P
P
LCC-28
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite
applications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = ±12V, TC = 25°C Continuous Drain Current
ID @ VGS = ±12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Pre-Irradiation
N-Channel
P-Channel
4.6
-2.8
2.9
-1.8
18.4
-11.2
12
12
0.1
0.1
±20
±20
47 Á
70 ²
4.6
-2.8
1.2
1.2
6.1 Â
- 7.1 ³
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.89 (Typical)
g
1
05/01/15