|
IRHQ567110 Datasheet, PDF (1/14 Pages) International Rectifier – RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28) | |||
|
PD - 94057B
IRHQ567110
RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL
POWER MOSFET
SURFACE MOUNT (LCC-28)
RAD-Hard⢠HEXFET®
4# TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHQ567110 100K Rads (Si) 0.27â¦
IRHQ563110 300K Rads (Si) 0.29â¦
IRHQ567110 100K Rads (Si) 0.96â¦
IRHQ563110 300K Rads (Si) 0.98â¦
ID
4.6A
4.6A
-2.8A
-2.8A
CHANNEL
N
N
P
P
LCC-28
International Rectifierâs RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings ( Per Die)
Parameter
ID @ VGS = ±12V, TC = 25°C Continuous Drain Current
ID @ VGS = ±12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current â
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current â
Repetitive Avalanche Energy â
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
N-Channel
4.6
2.9
P-Channel
-2.8
-1.8
Units
A
18.4
-11.2
12
12
W
0.1
±20
47 â
0.1
±20
70 ~
W/°C
V
mJ
4.6
-2.8
A
1.2
6.1 â
-55 to 150
1.2
7.1
mJ
V/ns
oC
300 (for 5s)
0.89 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
07/25/01
|
▷ |