IRHNM597110_15 Datasheet, PDF (1/10 Pages) International Rectifier – Simple Drive Requirements

PD-97179B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
IRHNM597110
JANSR2N7506U8
100V, P-CHANNEL
REF: MIL-PRF-19500/749
5_ ^TECHNOLOGY
Part Number
IRHNM597110
IRHNM593110
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on) ID
1.2Ω -3.1A
1.2Ω -3.1A
QPL Part Number
JANSR2N7506U8
JANSF2N7506U8
Refer to Page 10 for 1 Additional Part Number -
IRHNMC597110 (Ceramic Lid)
SMD-0.2
(METAL LID)
International Rectifier’s R5^TM technology provides high
performance power MOSFETs for space applications. These
devices have been characterized for Single Event Effects
(SEE) with useful performance up to an LET of 80 (MeV/
(mg/cm²)). The combination of low RDS(on) and low gate
charge reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n Complimentary N-Channel Available -
IRHNM57110, IRHNMC57110
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
-3.1
-2.0
-12.4
23
0.18
±20
28
-3.1
2.3
-21
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.25 (Typical)
g
1
09/03/10