IRHNJ7130_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 93820A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level RDS(on)
IRHNJ7130 100K Rads (Si) 0.18Ω
IRHNJ3130 300K Rads (Si) 0.18Ω
IRHNJ4130 500K Rads (Si) 0.18Ω
IRHNJ8130 1000K Rads (Si) 0.18Ω
ID
14.4A
14.4A
14.4A
14.4A
International Rectifier’s RAD-Hard^TM HEXFET^® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHNJ7130
100V, N-CHANNEL
RAD-Hard^™ HEXFET^®
MOSFET TECHNOLOGY
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Pre-Irradiation
Units
14.4
9.1
A
58
75
W
0.6
W/°C
±20
V
150 Á
mJ
14.4
A
7.5
mJ
6.0 Â
V/ns
-55 to 150
o_C
300 (for 5s)
1.0 (Typical)
g
1
05/02/06