IRHNJ67C30_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-97198B
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
2N7598U3
IRHNJ67C30
600V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHNJ67C30 100K Rads (Si) 2.9Ω
IRHNJ63C30 300K Rads (Si) 2.9Ω
ID
3.4A
3.4A
International Rectifier’s R6^TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm²).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-0.5
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
3.4
2.2
13.6
75
0.6
±20
76
3.4
7.5
9.2
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
1.0 (Typical)
g
For footnotes refer to the last page
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1
08/05/15