IRHNJ67C30 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

PD-97198
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level RDS(on)
IRHNJ67C30 100K Rads (Si) 2.9Ω
IRHNJ63C30 300K Rads (Si) 2.9Ω
ID
3.4A
3.4A
International Rectifier’s R6^TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm²). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
IRHNJ67C30
600V, N-CHANNEL
TECHNOLOGY
SMD-0.5
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
3.4
2.2
13.6
75
0.6
±20
76
3.4
7.5
9.2
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
300 (for 5s)
1.0 (Typical)
g
1
08/14/06