IRHNJ67134_15 Datasheet, PDF (1/9 Pages) International Rectifier – Simple Drive Requirements

PD-96931C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ67134
JANSR2N7589U3
150V, N-CHANNEL
REF: MIL-PRF-19500/746
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNJ67134 100K Rads (Si) 0.088Ω 19A JANSR2N7589U3
IRHNJ63134 300K Rads (Si) 0.088Ω 19A JANSF2N7589U3
SMD-0.5
International Rectifier’s R6^TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm²). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
19
12
76
75
0.6
±20
60
19
7.5
8.6
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
1.0 (Typical)
g
For footnotes refer to the last page
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1
08/20/13