IRHNJ597Z30_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-94661A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
IRHNJ597Z30
JANSR2N7519U3
30V, P-CHANNEL
REF: MIL-PRF-19500/732
5 TECHNOLOGY
™
Part Number
IRHNJ597Z30
IRHNJ593Z30
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.07Ω
0.07Ω
ID
-22A*
-22A*
QPL Part Number
JANSR2N7519U3
JANSF2N7519U3
International Rectifier’s R5^TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm²)). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings
Parameter
ID@ VGS = -12V, TC =25°C
ID@ VGS = -12V, TC =100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
-22*
-18
-88
75
0.6
±20
152
-22
7.5
-1.57
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
1
03/12/15