IRHNJ597130_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-94047B
IRHNJ597130
RADIATION HARDENED
JANSR2N7545U3
POWER MOSFET
REF: MIL-PRF-19500/712
SURFACE MOUNT (SMD-0.5)
Product Summary
100V, P-CHANNEL
5 TECHNOLOGY
™
Part Number
IRHNJ597130
IRHNJ593130
Radiation Level
100K Rads (Si)
300K Rads (Si)
Rds(on)
0.205 Ω
0.205 Ω
ID QPL Part Number
-12.5A JANSR2N7545U3
-12.5A JANSF2N7545U3
International Rectifier’s R5^TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single
Event Effects (SEE) with useful performance up to an
LET of 80 (MeV/(mg/cm²)). The combination of low
RDS(on) and low gate charge reduces the power losses
in switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
-12.5
-8.0
A
-50
75
W
0.6
W/°C
±20
V
96
mJ
-12.5
A
7.5
mJ
-6.2
V/ns
-55 to 150
o_C
300 ( for 5s )
1.0 ( Typical )
g
For footnotes refer to the last page
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1
02/16/06