IRHNJ597034_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-94608C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
IRHNJ597034
JANSR2N7520U3
IRHNJC597034
JANSR2N7520U3C
60V, P-CHANNEL
REF: MIL-PRF-19500/732
5 TECHNOLOGY
™
Part Number
IRHNJ597034
IRHNJ593034
Radiation Level RDS(on)
100K Rads (Si) 0.085Ω
300K Rads (Si) 0.085Ω
ID QPL Part Number
-21A JANSR2N7520U3
-21A JANSF2N7520U3
Refer to Page 8 for Additional Part Number -
IRHNJC597034 - SMD-0.5 (Ceramic Lid)
SMD-0.5
(Metal Lid)
International Rectifier’s R5^TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm²)). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Pre-Irradiation
-21
-13.3
-84
75
0.6
±20
110
-21
7.5
-2.0
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
1.0 (Typical)
g
For footnotes refer to the last page
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1
02/11/15