IRHNJ57Z30_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD - 93751D
IRHNJ57Z30
RADIATION HARDENED
POWER MOSFET
JANSR2N7479U3
30V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
Product Summary
REF: MIL-PRF-19500/703
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNJ57Z30 100K Rads (Si) 0.020Ω 22A* JANSR2N7479U3
IRHNJ53Z30 300K Rads (Si) 0.020Ω 22A* JANSF2N7479U3
IRHNJ54Z30 500K Rads (Si) 0.020Ω 22A* JANSG2N7479U3
IRHNJ58Z30 1000K Rads (Si) 0.025Ω 22A* JANSH2N7479U3
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
22*
22*
88
75
0.6
±20
155
22
7.5
1.7
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
* Current is limited by package
For footnotes refer to the last page
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1
04/25/06