IRHNJ57234SE_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-93837D
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ57234SE
JANSR2N7555U3
250V, N-CHANNEL
REF: MIL-PRF-19500/704
5 TECHNOLOGY
™
Product Summary
Part Number Radiation Level R_DS(on)
IRHNJ57234SE 100K Rads (Si) 0.4Ω
ID QPL Part Number
10A JANSR2N7555U3
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
10
6.4
40
75
0.6
±20
58
10
7.5
2.4
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
1.0 (Typical)
g
For footnotes refer to the last page
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1
01/27/15