IRHNJ57130_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

PD-93754G
IRHNJ57130
RADIATION HARDENED
POWER MOSFET
JANSR2N7481U3
100V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
Product Summary
REF: MIL-PRF-19500/703
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on)
IRHNJ57130 100K Rads (Si) 0.06Ω
IRHNJ53130 300K Rads (Si) 0.06Ω
IRHNJ54130 500K Rads (Si) 0.06Ω
IRHNJ58130 1000K Rads(Si) 0.075Ω
ID
22A*
22A*
22A*
22A*
QPL Part Number
JANSR2N7481U3
JANSF2N7481U3
JANSG2N7481U3
JANSH2N7481U3
SMD-0.5
International Rectifier’s R5^TM technology provides
high performance power MOSFETs for space
applications.These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm²)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
22*
16
88
75
0.6
±20
70
22
7.5
1.4
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
1.0 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/27/11