IRHNB7264SE Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)

PD - 91738A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
IRHNB7264SE
250V, N-CHANNEL
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) I D
IRHNB7264SE 100K Rads (Si) 0.11Ω 34A
International Rectifier’s RADHard^TM HEXFET^® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
SMD-3
Features:
! Single Event Effect (SEE) Hardened
! Ultra Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Surface Mount
! Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
34
21
A
136
300
W
2.4
W/°C
±20
V
500
mJ
34
A
30
mJ
2.5
-55 to 150
V/ns
o_C
300 (for 5 sec.)
3.3 (Typical)
g
1
6/4/01