IRHNB7160 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)

PD - 91795A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
IRHNB7160
100V, N-CHANNEL
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHNB7160
IRHNB3160
IRHNB4160
IRHNB8160
100K Rads (Si) 0.040Ω 51A
300K Rads (Si) 0.040Ω 51A
600K Rads (Si) 0.040Ω 51A
1000K Rads (Si) 0.040Ω 51A
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
SMD-3
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Surface Mount
! Light Weight
Pre-Irradiation
51
32.5
204
300
2.4
±20
500
51
30
7.3
-55 to 150
300 ( for 5 sec)
3.5 (Typical )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
www.irf.com
1
12/10/01