IRHNB7064 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)

PD - 91737A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-3)
IRHNB7064
60V, N-CHANNEL
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHNA7064 100K Rads (Si) 0.015Ω 75*A
IRHNA3064 300K Rads (Si) 0.015Ω 75*A
IRHNA4064 600K Rads (Si) 0.015Ω 75*A
IRHNA8064 1000K Rads (Si) 0.015Ω 75*A
SMD-3
International Rectifier’s RADHard HEXFET^® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
75*
56
A
300
300
W
2.4
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
±20
500
75*
30
2.5
-55 to 150
300 ( for 5 sec.)
3.5 (Typical )
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
*Current is limited by pin diameter
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