IRHNA9260_15 Datasheet, PDF (1/8 Pages) International Rectifier – Simple Drive Requirements

RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
PD - 93969A
IRHNA9260
JANSR2N7426U
200V, P-CHANNEL
REF: MIL-PRF-19500/655
RAD-Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNA9260 100K Rads (Si)
IRHNA93260 300K Rads (Si)
RDS(on)
0.154Ω
0.154Ω
ID QPL Part Number
-29A JANSR2N7426U
-29A JANSF2N7426U
International Rectifier’s RAD-Hard^TM HEXFET^®
MOSFET technology provides high performance
power MOSFETs for space applications.This
technology has over a decade of proven performance
and reliability in satellite applications. These devices
have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low
RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
SMD-2
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
-29
-18
-116
300
2.4
±20
500
-29
30
-20
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
www.irf.com
1
02/01/06