IRHNA7460SE Datasheet, PDF (1/4 Pages) International Rectifier – TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)

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Provisional Data Sheet No. PD-9.1399A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHNA7460SE
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
500 Volt, 0.32Ω, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 10⁵ Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10¹² Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits in space
and weapons environments.
Product Summary
Part Number
BVDSS
IRHNA7460SE 500V
RDS(on)
ID
0.32Ω 20A
Features:
n Radiation Hardened up to 1 x 10⁵ Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Lightweight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
Pre-Radiation
IRHNA7460SE
20
12
80
300
2.4
±20
500
20
30
3.5
-55 to 150
300 (for 5 sec.)
3.3 (typical)
Units
A
W
W/K …
V
mJ
A
mJ
V/ns
o_C
g