IRHNA7260 Datasheet, PDF (1/4 Pages) International Rectifier – TRANSISTOR N-CHANNEL

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Provisional Data Sheet No. PD-9.1397
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHNA7260
IRHNA8260
N-CHANNEL
MEGA RAD HARD
200 Volt, 0.070Ω, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 10⁵ Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10¹² Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of parallel-
ing and temperature stability of the electrical param-
eters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
BV DSS
IRHNA7260
200V
IRHNA8260
200V
RDS(on)
ID
0.070Ω 43A
0.070Ω 43A
Features:
n Radiation Hardened up to 1 x 10⁶ Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Lightweight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
Pre-Radiation
IRHNA7260, IRHNA8260
43
27
172
300
2.4
±20
500
43
30
5.0
-55 to 150
300 (for 5 sec.)
3.3 (typical)
Units
A
W
W/K …
V
mJ
A
mJ
V/ns
o_C
g